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NXP Semiconductors
PESD24VS1UA
Unidirectional ESD protection diode
6. Characteristics
Table 8. Characteristics
T amb = 25 ° C unless otherwise specified.
Symbol
V RWM
Parameter
reverse standoff
Conditions
Min
-
Typ
-
Max
24
Unit
V
voltage
I RM
reverse leakage
V RWM = 24 V
-
<1
50
nA
current
V BR
C d
breakdown voltage
diode capacitance
I R = 5 mA
f = 1 MHz; V R = 0 V
26.5
-
27.0
23
27.5
50
V
pF
V CL
clamping voltage
[1][2]
I PP = 1 A
I PP = 3 A
-
-
-
-
36
70
V
V
r dyn
dynamic resistance
I R = 10 A
[2][3]
-
1.53
-
Ω
[1]
[2]
[3]
Non-repetitive current pulse 8/20 μ s exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1 to pin 2.
Non-repetitive current pulse, Transmission Line Pulse (TLP) t p = 100 ns; square pulse;
ANS/IESD STM5-1-2008.
10 4
P pp
(W)
10 3
10 2
006aac519
1.2
P PP
P PP(25 ° C)
0.8
0.4
001aaa193
10
1
10
10 2
10 3
t p (μs)
10 4
0
0
50
100
150
T j ( ° C)
200
T amb = 25 ° C
Fig 3.
Peak pulse power dissipation as a function of
pulse time; typical values
Fig 4.
Relative variation of peak pulse power as a
function of junction temperature; typical
values
PESD24VS1UA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 7 March 2011
? NXP B.V. 2011. All rights reserved.
4 of 13
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